100A 30V N-Channel Enhancement Mode Power Mosfet 30h10K to-252b
- Product Code: 30H10K
- Availability: In Stock
- FOB Price: Negotiable | Get Latest Price
Jiangsu Donghai Semiconductor Co.,Ltd.
- Location: Jiangsu, China
- Business Type: Manufacturer
- : Mosfets, Diodes, IGBT, Transistor, Thyristor, IC
For product pricing, customization, or other inquiries:
100A 30V N-Channel Enhancement Mode Power Mosfet 30h10K to-252b
100A 30V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel Enhanced VDMOSFETs Used
advanced trench technology design, provided excellent
RDSON and low gate charge. Which accords with the
RoHS standard.
| Features |
| Fast Switching |
| Low ON Resistance(Rdson≤0.55mΩ) |
| Low Gate Charge(Typ: 43nC) |
| Low Reverse Transfer Capacitances(Typ: 215pF) |
| 100% Single Pulse Avalanche Energy Test |
| 100% ΔVDS Test |
| Applications |
| Power switching applications |
| Inverter management system |
| Electric Tools |
| Automotive Electronics |
| PARAMETER | SYMBOL | VALUE | UNIT | ||
| 30H10/30H10I/30H10E/30H10K/30H10B | 30H10F | ||||
| Maximum Drian-Source DC Voltage | VDS | 30 | V | ||
| Maximum Gate-Drain Voltage | VGS | ±20 | V | ||
| Drain Current(continuous) | ID(T=25ºC) | 100 | A | ||
| (T=100ºC) | 70 | A | |||
| Drain Current(Pulsed) | IDM | 280 | A | ||
| Single Pulse Avalanche Energy | EAS | 200 | mJ | ||
| Total Dissipation | Ta=25ºC | Ptot | 2 | 2 | W |
| TC=25ºC | Ptot | 60 | 24 | W | |
| Junction Temperature | Tj | -55~150 | ºC | ||
| storage Temperature | Tstg | -55~150 | ºC | ||
| Product Specifications and Packaging Models | |||||
| Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
| 30H10 | TO-220C | 30H10 | Pb-free | Tube | 1000/box |
| 30H10F | TO-220F | 30H10F | Pb-free | Tube | 1000/box |
| 30H10B | TO-251 | 30H10B | Pb-free | Tube | 3000/box |
| 30H10K | TO-252 | 30H10K | Pb-free | Tape & Reel | 2500/box |
| 30H10I | TO-262 | 30H10I | Pb-free | Tube | 1000/box |
| 30H10E | TO-263 | 30H10E | Pb-free | Tape & Reel | 800/box |
Tags: 30H10K
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