Jiangsu Donghai Semiconductor Co.,Ltd.

100A 30V N-Channel Enhancement Mode Power Mosfet 30h10K to-252b

100A 30V N-Channel Enhancement Mode Power Mosfet 30h10K to-252b

  • Product Code: 30H10K
  • Availability: 100000

This product has a minimum quantity of 5000
Company Profile

Jiangsu Donghai Semiconductor Co.,Ltd.

  • Location: Jiangsu, China
  • Business Type: Manufacturer
  • : Mosfets, Diodes, IGBT, Transistor, Thyristor, IC

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100A 30V N-Channel Enhancement Mode Power Mosfet 30h10K to-252b

100A 30V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel Enhanced VDMOSFETs Used
advanced trench technology design, provided excellent
RDSON and low gate charge. Which accords with the
RoHS standard.
 

Features
Fast Switching
Low ON Resistance(Rdson≤0.55mΩ)
Low Gate Charge(Typ: 43nC)
Low Reverse Transfer Capacitances(Typ: 215pF)
100% Single Pulse Avalanche Energy Test
100% ΔVDS Test
Applications
Power switching applications
Inverter management system
Electric Tools
Automotive Electronics

 

PARAMETER SYMBOL VALUE UNIT
30H10/30H10I/30H10E/30H10K/30H10B 30H10F
Maximum Drian-Source DC Voltage VDS 30 V
Maximum Gate-Drain Voltage VGS ±20 V
Drain Current(continuous) ID(T=25ºC) 100 A
(T=100ºC) 70 A
Drain Current(Pulsed) IDM 280 A
Single Pulse Avalanche Energy EAS 200 mJ
Total Dissipation Ta=25ºC Ptot 2 2 W
TC=25ºC Ptot 60 24 W
Junction Temperature Tj -55~150 ºC
storage Temperature Tstg -55~150 ºC

 

Product Specifications and Packaging Models
Product Model Package Type Mark Name RoHS Package Quantity
30H10 TO-220C 30H10 Pb-free Tube 1000/box
30H10F TO-220F 30H10F Pb-free Tube 1000/box
30H10B TO-251 30H10B Pb-free Tube 3000/box
30H10K TO-252 30H10K Pb-free Tape & Reel 2500/box
30H10I TO-262 30H10I Pb-free Tube 1000/box
30H10E TO-263 30H10E Pb-free Tape & Reel 800/box

Tags: 30H10K